MTI  |  SKU: IPFecA50D035C1US

InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US

€799,25

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US

MTI

  • InP single crystal wafer
  • Orientation: (111)B
  • Size: 2" diameter x 0.35mm
  • Doping: Fe doped
  • Conducting type: Semi-Insulating
  • Resistivity:(1.91-5.02)E7 ohm.cm
  • Mobility:2230-2870 cm^2/v.s
  • Polish: one side polished
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing

 

 

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