MTI  |  SKU: IPSa50D05C1US

InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp

€688,85

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InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp

MTI

InP  single crystal wafer
Growing Method:                  VGF
Orientation:                         (100)
Size:                                   2" diameter x 0.5 mm
Doping:                               S- doped
Conducting type:                  S-C-N
Polish:                                one side  polished
Resistivity:                          (1.8-2.0)x10^-3 ohm.cm
Mobility:                             1850-1870 cmE2/V.S
EPD:                                  <2000 /cmE2
Carrier Concerntration:        (1.7-1.9) x10^18 /cm^3
Ra(Average Roughness) :    < 0.4 nm

EPI ready surface and packing

 
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