MTI  |  SKU: IASa50D05C1US

InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

€626,75

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InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

MTI

2" InAs wafer (Ntype)

  • 2" InAs wafer     (S-doped, Ntype)
  • Size:                     2" dia x 500 micron +/-25 microns
  • Orientation:          <100> +/-0.50
  •  Polishing:             One-side polishd
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                  SEMI                
  • Doping                                                                S-doped
  • Conductivity type                                               N type
  • Carrier Concentration                                     (1-30)x10^17/ cm3
  • EPD                                                                   <50000 cm^-2 
  • Resistivity:                                                     
  • Mobility:                                                        <10000 cm^2/vs

                                                             

 

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