MTI  |  SKU: GEU211ori50D045C2R45US

Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm

€264,44


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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 2SP, Resistivities: > 45 ohm.cm

MTI

Ge Wafer Specification

  • Growing Method:            CZ
  • Orientation:                    (211) +/_0.5 Deg.
  • Wafer Size:                    2" dia x  450 microns  
  • Surface Polishing:           two sides epi polished
  • Surface roughness:          < 8 A ( by AFM)
  • Doping:                          Undoped
  • Conductor type:              N-type
  • Resistivity:                     > 45 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our
     Portable 4 Probe Resistivity Testing Instrument.)
                                
  • Package:                      under 1000 class clean room      

Typical Properties:

  • Structure:                       Cubic, a = 5.6754 A
  • Density:                          5.323 g/cm3 at room temperature
  • Melting Point:                  937.4 oC
  • Thermal Conductivity:       640