Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm

Ge Wafer Specification

• Growing Method:          CZ
• Orientation:                  (111) +/-0.5 Deg.
• Wafer Size:                  4" dia x  500 microns  
• Surface Polishing:         One   side  epi polished
• Surface roughness:       < 30 A ( by AFM)
• Doping:                        Sb- Doped
• Conductor type:            N-type
• Resistivity:                    0.014-0.022 Ohm-cm (If you would like to measure the resistivity accurately, 
                                     please order our Portable 4 Probe Resistivity Testing Instrument.)                         
• Package:                      under 1000 class clean room         

Typical Properties:

• Structure:                     Cubic, a = 5.6754Å
• Density:                        5.323 g/cm3 at room temperature
• Melting Point:                937.4 ^oC
• Thermal Conductivity:     640