Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm

Specifications

• Growing Method:             CZ
• Wafer Size:                  10x10x0.5 mm
• Surface Polishing:          one side optical polished
• Orientation:                   (110) +/- 0.7 degree
• Surface finish (RMS or Ra) :  < 30A
• Doping:                         Sb-doped
• Conductor type:             N-type
• Resistivity:                     0.1-0.5 Ohms/cm
• EPD:                             N/A
• Package:                       under 1000 class clean room  in wafer container     
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