Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,2sp, R:40 ohm.cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (111) +/-0.5 Deg.
• Wafer Size:                      4" dia x  500 microns  ( +/- 10 microm)
• Surface Polishing:            Two  sides  epi polished
• Surface roughness:          <30 A ( by AFM)
• Doping:                           Un- Doped
• Conductor type:               N-type
• Resistivity:                      >40 ohm.cmOhms/cm (If you would like to measure the resistivity accurately, 
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)                              
• Package:                        under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640