MTI  |  SKU: GeSbc050505S1R0005US

Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm

€34,44

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Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm

MTI

Specifications

  • Growing Method:             CZ
  • Wafer Size:                  5x5x0.5 mm
  • Surface Polishing:          One side epi polished
  • Orientation:                   (111)
  • Surface roughness:        < 8 A ( by AFM)
  • Doping:                         Sb-doped
  • Conductor type:             N-type
  • Resistivity:                    0.005-0.01 Ohms/cm
  • EPD:                             N/A
  • Package:                       under 1000 class clean room  in wafer container     
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