Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm

Specifications

• Growing Method:             CZ
• Wafer Size:                  10x10x0.5 mm
• Surface Polishing:       One side epi polished
• Orientation:                   (111)
• Surface roughness:        < 8 A ( by AFM)
• Doping:                         Sb-doped
• Conductor type:             N-type
• Resistivity:                    0.005-0.01 Ohms/cm
• EPD:                             N/A
• Package:                       under 1000 class clean room  in wafer container     
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