MTI | SKU: GSua050505S1

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

€79,35

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GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

MTI

Wafer Specifications:.

Size: 5x5 x 0.5mm,
Orientation: (100)
Dopping: undoped,
Conducting type: P-type.
Polish: one side polished by CMP
Packing: 1000 class clean room in a single wafer container

Typical Properties

Crystal Structure: cubic a = 6.095 Å
Density: 5.619 g/cm³
Melting point: 710 ^oC
Grown by a special LEC technique , EPD :<10^4/cm².
Carrier concentration: ( 1-2)x10^17 cm^-3
Mobility: 600-700 cm^2/Vs
EPD <3000 cm^-2
Thermal Expansion: 6.1 x 10 ^-6 /oK
Thermal conductivity: 270 mW / cm.k at 300K

Dopant	Type	Carrier Concentration ( cm^-3)	Mobility ( cm²/V.Sec)	Resistivity ( ohm-cm )	EPD (cm^-2)
Undoped	P	1.0~2.0 x 10¹⁷	600 ~ 800	~0.1	<10000
Zn	P⁺	2.0~5.0 x 10¹⁸	300 ~ 500	~0.004	<10000
Te	N	2.0~6.0 x 10¹⁷	2500 ~ 3500	~0.05	<10000
High Resistivity	P or N	1.0~2.0 x 10¹⁶	460	~ 1.0	<10000

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