MTI  |  SKU: GSUa50D05C2US

GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished - GSUa50D05C2US

€868,25

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished - GSUa50D05C2US

MTI

Wafer Specifications:. 

  • Size:                      2" diameter x 0.5mm,
  • Orientation:          (100)
  • Dopping:              undoped,
  • Conducting type: P-type.
  • Polish:                   two sides polished by CMP
  • Roughness:         < 0.5nm
  • Packing:               1000 class clean room in a single wafer container           

   Typical Properties

  •  Crystal Structure:                                 cubic a = 6.095 ??0‡3
  • Density:                                                 5.619 g/cm3
  • Melting point:                                        710 oC
  • Grown by a special LEC technique , EPD :<10000/cm2
  • Thermal Expansion:                           6.1 x 10 -6 /oK
  • Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000















Related Product

Other GaSb

 		InAs

 InP 

 GaAs


 		InSb

 Wafer Box

 Film Coater

 RTP Furnaces


 

Back to top