MTI | SKU: GSZna50D045C1US

GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

Name: GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3
Brand: MTI
SKU: GSZna50D045C1US
Price: 630.20 EUR
Availability: InStock

€630,20

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MTI

High quality GaSb single crystal wafers for semiconductor industries.
Size: 2" diameter x 0.45mm,
Orientation: (100)
Dopping: Zn- doped,
Conducting type: P-type.
Carrier concentration:(1-3)x10^17 cm^-3
EPD: < 10^4 cm ^-2
Mobility:200-500 cm^2/V.S
Polish: one side polished.
Grown by a special LEC technique
Surface finish (RMS or Ra) : < 5A

Typical Properties

Crystal Structure: cubic a = 6.095 Å
Density: 5.619 g/cm³
Melting point: 710 ^oC
Thermal Expansion: 6.1 x 10 ^-6 /oK
Thermal conductivity: 270 mW / cm.k at 300K

Dopant	Type	Carrier Concentration ( cm^-3)	Mobility ( cm²/V.Sec)	Resistivity ( ohm-cm )	EPD (cm^-2)
Undoped	P	1.0~2.0 x 10¹⁷	600 ~ 800	~0.1	<10000
Zn	P⁺	1.0~3.0 x 10¹⁷	200 ~ 500	~0.004	<10000
Te	N	2.0~6.0 x 10¹⁷	2500 ~ 3500	~0.05	<10000
High Resistivity	P or N	1.0~2.0 x 10¹⁶	460	~ 1.0	<100