MTI  |  SKU: GSTea50D045C1US

GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

€861,35

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GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3

MTI

High quality GaSb single crystal wafers for semiconductor industries. 

  • Size: 2" diameter x 0.5mm,
  • Orientation: (100)
  • Flats: SEMI
  • Dopping: Te doped,
  • Conducting type: N-type.
  • Mobility:2000-3500 cm^2/V.s
  • Carrier Concentration: (1-8)x10^17 cm^-3
  • Polish: one side polished.
  • Grown by a special LEC technique , EPD :<1000/cm2
  • We also provide high resistivity N and P type GaSb wafers.
  • Surface finish (Ra) :   < 5A 

Typical Properties
Crystal Structure:                                 cubic a = 6.095 Å
 Density:                                                 5.619 g/cm3
 Melting point:                                        710 oC
Thermal Expansion:                           6.1 x 10 -6 /oK
Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000

 

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