MTI  |  SKU: GPSc50D045C1

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp

€654,35

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GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp

MTI

  • GaP single crystal wafer,
  • Size: 2" diameter(±0.15mm) x 0.45mm(±0.05mm),
  • Doping: S-doped,
  • Conducting type: N-type,
  • Orientation: (111)±30'
  • Edge Orientation: (110)±1°
  • Polished:One  side  polished.
  • Surface finish (RMS or Ra) :  < 8A

    Typical Physical Properties

    Crystal Structure

    Cubic.            a =5.4505 ?/FONT>

    Growth Method

    CZ (LEC)

    Density

    4.13  g/cm3

    Melt Point

    1480  oC

    Thermal Expansion

    5.3 x10-6  / oC

    Dopant

    S doped

    undoped

    Crystal growth axis

    <111>  or <100>

    <100> or <111>

    Conducting Type

    N

    N

    Carrier Concentration

    2 ~ 8 x1017 /cm3

    4 ~ 6 x1016 /cm3

    Resistivity

    ~ 0.03 W-cm

    ~ 0.3 W-cm

    EPD

    < 3x105

    < 3x105

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