GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade
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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4&qu...
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade
MTI
GaAs single crystal wafer,Mechanical Grade
Growing Method: VGF
Orientation: (100)
Diameter: 4" dia
Thickness: 0.6 mm +/- 0.05 mm
Polishing: two sides polished;
NOT EPI Ready wafer
Doping: undoped
Conductor type: Semi-Insulating
Resistivity: N/A
Mobility: N/A
EPD: N/A
PrimPrimary Flat: EJ(0-1-1)
Minor Flat: EJ(0-11)
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