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MTI | SKU:
GAUa76D05C2US5
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 2SP - GAUa76D05C2US5
€435,85
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GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3&quo...
€435,85
Unit price
/
Unavailable
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 2SP - GAUa76D05C2US5
MTI
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 3" dia x 0.5mm
Polishing: both sides polished;
Doping: undoped
Conductor type: Semi-Insulating
Resistivity: ( 0.6-4.04)x10^8Ohm.cm
Mobility: 4510-6380cm^2/V.S
EPD: <5000cm^-2
PrimPrimary Flat: EJ(0-1-1)+-1 degree,22+-1.0mm
Minor Flat: EJ(0-1-1)+-1 degree, 11+-1.0mm
Related Products
Growing Method: VGF
Orientation: (100)
Size: 3" dia x 0.5mm
Polishing: both sides polished;
Doping: undoped
Conductor type: Semi-Insulating
Resistivity: ( 0.6-4.04)x10^8Ohm.cm
Mobility: 4510-6380cm^2/V.S
EPD: <5000cm^-2
PrimPrimary Flat: EJ(0-1-1)+-1 degree,22+-1.0mm
Minor Flat: EJ(0-1-1)+-1 degree, 11+-1.0mm
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