MTI  |  SKU: GAUa100D06C2US5

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

€458,85

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

MTI

  • GaAs single crystal wafer
  • Growing Method:                 VGF
  • Orientation:                        (100) 
  • Flat:                                   (01-1) .(011)
  • Size:                                 100mm dia x 0.6mm 
  • Polishing:                           two sides polished
  • Ra(Average Roughness) :    < 0.4 nm
  • Doping:                              undoped
  • Conductor type:                  Semi-Insulating
  • Resistivity:                         (1.41-4.4)E8 Ohm.cm
  • Mobility:                            3240-6000 cm2 / v.s.
  • EPD:                                 <5000/cm2
  • EPI ready surface and packing

Related Products

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces
Back to top