MTI  |  SKU: GAUe76D05C1US5

GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp

€378,35

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GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Primary Flat: EJ(1-10) +/- 0.5 degree
  • Secondary Flat: EJ (001) +/- 0.5 degree
  • Size: 3" dia x 0.5mm 
  • Polishing: One  side  polished
  • Doping: Un-doped, Semi-Insulating
  • Conductor type:S-I
  • Carrier Concentration: N/A
  • Mobility:  4570-6190cm^2/V.S
  • Resistivity : (0.89-3.8)x10^8ohm.cm
  • EPI ready surface and packing

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