MTI  |  SKU: GAUe50D05C1US5

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

€343,85

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 2" dia x 0.5mm 
  • Polishing: one side polished
  • Doping: undoped, 
  • Conductor type:SI ( semi-insulating 
  • Carrier Concentration: N/A
  • Mobility: 3710-6230cm^2/V.S
  • EPD: N/A
  • Resistivity:(0.2-5.5)E8 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing


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