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MTI | SKU:
GASie50D035C1US5
GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp
€344,43
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GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp
MTI
Specifications:
- GaAs single crystal wafer
- Growing method: VGF
- Orientation: (110)
- Size: 2" dia x 0.35 mm
- Polishing: One side polished
- Doping: Si-doped
- Conductor type: S-C-N
- Carrier concentration: (1.20-2.45)x10^17/cm^3
- Mobility: 3380-3970 cm^2/V.S
- Ra(Average Roughness) : < 0.4 nm
- Resistivity: (0.76-1.37)x10^-2 ohm.cm
- Note: EPI ready wafers
