MTI  |  SKU: GASie100503S2US

GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

€63,19

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 10 x 5 x 0.35 mm 
  • Polishing: Two  sides polished
  • Doping: Si-doped
  • Conductor type: S-C-N
  • Carrier Concentration: (2.4-3.27)x10E18/cm^3
  • Mobility:  1630-1870 cm^2/V.S
  • Resistivity :( 1.17-1.4)x10^-3 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • Note:  EPI ready wafers


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