MTI  |  SKU: GAUe50D08CNLECUS

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

€1.148,85


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GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

MTI

  • GaAs single crystal wafer
  • Growing Method:            LEC
  • Orientation:                   (110)
  • Size:                             2" dia x 2.8 mm 
  • Polishing:                      As Cut
  • Doping:                         undoped
  • Conductor type:             Semi-Insulating
  • Resistivity:                     >1 x 107 Ohm.cm
  • Mobility:                        4500 cm 2/ V.S
  • Carrire Concentration:    <1 x108 cm^-3
  • EPD:                           < 5x104/cm-2

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