MTI  |  SKU: GASia76D0625C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

€458,85

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GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

MTI

  • GaAs single crystal wafer
  • Growing Method:                        VGF
  • Orientation:                                (100)+/- 0.5 degree
  • Size:                                         3"  dia x 0.625mm
  • Polishing:                                  two  sides  polished
  • Doping:                                     Si doped
  • Conductor type:                         S-C-N
  • Carrier Concentration:                (1.06-3.96) x 10^18/cm^3
  • Mobility:                                   1420-2480 cm^2/V.S
  • Resistivity:                                (1.1-2.38) E-3  ohm.cm
  • EPD:                                        <1000cm^2
  • Ra(Average Roughness) :           < 0.4 nm
  • EPI ready surface and packing 
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