MTI  |  SKU: GASia50D05C2US5

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

€362,25

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GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

MTI

  • GaAs single crystal wafer
  • Growing Method:                   VGF
  • Orientation:                           (100)
  • Size:                                     2" dia x 0.5mm
  • Polishing:                              two  sides  polished
  • Doping:                                 Si doped
  • Conductor type:                     S-C-N
  • Carrier Concentration:             (3.8-6.4) x 10^16 /cm^3
  • Mobility:                                (3450-4150) cm^2/V.S
  • Resistivity:                             (2.74-4.24) E-2  ohm.cm
  • EPD:                                     < 5000cm^2
  • Ra(Average Roughness) :        < 0.4 nm
  • EPI ready surface and packing 

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