MTI  |  SKU: GAUcA100D055C1US

GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp

€458,85

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GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (111)A
  • Primary Flat: US(0-11); Secondary Flat: US(2-1-1)
  • Size: 4" dia x 0.55 mm 
  • Polishing: One side polished
  • Doping: undoped
  • Conductor type: Semi-Insulating
  • Resistivity:(1.55-3.86)E8 ohm.cm
  • Carrier Concentration: N/A
  • Mobility:4120-5860 cm^2/V.S
  • EPD: N/A
  • Ra(Average Roughness) : < 0.4 nm
  • Note: EPI ready wafers

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