MTI  |  SKU: GASia50D035C1US5

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

€327,75

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

MTI

  • GaAs single crystal wafer
  • Growing Method:                       VGF
  • Orientation:                               (100)
  • Size:                                         2" dia x 0.35mm
  • Polishing:                                  One side polished
  • Doping:                                     Si doped
  • Conductor type:                         N-type
  • Carrier Concentration:                 (1.65 - 3.92) x 10^18 /cm^3
  • Mobility:                                    1440 - 2270 cm^2/V.S
  • Resistivity:                                (1.01 - 1.90) E-3  ohm.cm
  • EPD:                                        < 500 cm^2
  • Ra(Average Roughness) :           < 0.4 nm
  • EPI ready surface and packing 

Related Products

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces
Back to top