MTI  |  SKU: GAUe0505055S2US

GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp

€171,35


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GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp

MTI

  • GaAs single crystal wafer
  • Growing Method: 
  • Orientation: (110)
  • Flat:PF<110>
  •        SF  <100>
  • Size: 5x5x5.5-5.6mm
  • Polishing: Two  sides polished
  • Doping: un-doped
  • Conductor type: S-I
  • Mobility:  4800 cm^2/V.S
  • Resistivity :(1-9)x10^17 ohm.cm
  • Carrier Concentration: 1.3x10^7 cm^-3
  • EPD:1x10^4 cm^-2
  • Ra(Average Roughness) : < 5 Angstrom (RMS)