MTI  |  SKU: BTb101001US

Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved

€687,70

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved

MTI

Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
 
 
Specifications:
  • Structure:                     Hexagonal, group 166R-3M
  • Grown Method :            High-pressure vertical Bridgman
  • Lattice constant:           a=4.38A    c=30.5A
  • Substrate orientation:    highly oriented layer structure along <0001>
  • Surface:                       as Cleavaged
  • Purity:                         99.999%, atomic ratio
  • Melting Point:              585 oC
  • Resistivity :                 0.1-5 mohm. cm
  • Mobility :                     3000 cm2 / V.s 
  • General Size:            irregular  shape(~  10 mm x 10 mm x 0.1mm)
  • Packing:                      packed in plastic bag with vacuum



Related Products

 

Back to top