MTI  |  SKU: FmBNonSia100D0525C1FT24nm

Boron Nitride Film on Silicon Wafer, 24 nm / 4" -- BN-Si-100-24nm - FmBNonSia100D0525C1FT24nm

€800,40


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Boron Nitride Film on Silicon Wafer, 24 nm / 4" -- BN-Si-100-24nm - FmBNonSia100D0525C1FT24nm

MTI

Boron Nitride Film

Boron nitride is a chemical compound with the chemical formula BN, consisting of equal numbers of boron and nitrogen atoms.  BN film is  amorphous t     Its hardness is inferior only to diamond, but its thermal and chemical stability is superior.  Low-pressure deposition of thin films of boron nitride is grown on Si (100) wafers for this product by sputtering

  • BN Film coated by sputtering method
  • The amorphous structure  ( no orientation)
  • Dielectric
  • BN Thickness:  24 nm +/- 10%
  • Purity: > 99.99%

Silicon Wafer Specifications:

  • Conductive type:        Si   n-type
  • Resistivity:                  0.1-1.0 ohm-cm
  • Size:                          4" diameter +/- 0.5 mm   x 0.525 +/- 0.025 mm ( thickness)
  • Orientation:                (100) +/- 0.5o
  • Polish:                        One  sides  polished
  • Surface roughness:     Prime
  • Packing:                      Vacuum packed on a 4" single wafer carrier box

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