MTI | SKU:
GAUe0505055S2US
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
€171,35
Unit price
/
Unavailable
Couldn't load pickup availability
Delivery and Shipping to EU
Delivery and Shipping to EU
We will add in the quotation, the shipping, insurance, customs clearance costs.
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
MTI
- GaAs single crystal wafer
- Growing Method:
- Orientation: (110)
- Flat:PF<110>
- SF <100>
- Size: 5x5x5.5-5.6mm
- Polishing: Two sides polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 4800 cm^2/V.S
- Resistivity :(1-9)x10^17 ohm.cm
- Carrier Concentration: 1.3x10^7 cm^-3
- EPD:1x10^4 cm^-2
- Ra(Average Roughness) : < 5 Angstrom (RMS)