MTI  |  SKU: MIST-1600-6

1600°C Max. MIST/LPCVD System up to 6" Wafer - MIST-1600-6

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1600°C Max. MIST/LPCVD System up to 6" Wafer - MIST-1600-6

MTI

MIST-1600-6 is a MIST/LPCVD system designed for the epitaxial growth of thin films on various substrates up to 1600°C heated by induction. It features an induction-heated graphite substrate holder with precise PID control. The boron nitride (BN) shower head enables a uniform deposition of precursors on a substrate at an elevated temperature. The system also comes with a hermetic quartz chamber for LPCVD without worries of precursor leaks. It is a unique tool for high-temperature thin film growth, especially for next-generation semiconductors, such as Ga2O3 and BN. 

SPECIFICATIONS:

Power
  • 208-240 VAC, 50/60 Hz, 3 phase
  • 15 kW
  • A 10-foot power cord is included. The power plug is not covered
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