Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• One side SiO2 layer on 4'' Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-type/ un-dped 
• Resistivity:                 >10000 ohm.cm
• Size:                         4"dia +/- 0.5 mm x 0.5 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

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