Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm

Thermal oxide 

Research Grade , about 80 % useful  area

• SiO2 layer on 100mm Silicon wafer
• Oxide layer thickness: 300 nm   ( 3000A)  +/- 10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          P-type/ B-doped 
• Resistivity:                 0.01-0.05 ohm.cm  (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         100mm  dia +/- 0.5 mm x 0.5 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        one side  polished
• Surface roughness, Ra: < 5A (RMS)

Related Products

Thin Films  A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater