SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)

Silicon Wafer Specifications:

• Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate, 5x5x0.525 mm,1sp
  • SiO2=300nm
  • Ti=10nm
  • Pt(111)=150nm
• Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
  
• Substrate Size:            5x5x 0.525 mm
• Polish:                        one side polished
• Surface roughness:      < 20 A RMS
  
• Maximum Thermal Budget of Pt film: < 700-750 degree C/ 1 hr
• Optional:  you may need tool below to handle the wafer ( click picture to order )