MTI  |  SKU: FmSOS1010046S2FT06US

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick

€62,16

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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick

MTI

  
Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation.

Materials:  Silicon on Sapphire
 
Silicon EPI Layer:
  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness: 0.6 um +/- 10%
  • Resistivity: > 100 ohm.cm
  • Micro-particle density ( for particles > 2 um) < 2/cm^2
     
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size: 10x10 x 0.46 mm thickness 
  • Front surface: Epi-polished (Ra < 4 nm)
  • Back surface: Optical grade polish
  • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um

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