MTI | SKU: FmCu100Ta20onSiBa101005S1R1

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

Name: Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
Brand: MTI
SKU: FmCu100Ta20onSiBa101005S1R1
Price: 44.85 EUR
Availability: InStock

€44,85

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Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

MTI

Specifications:

Cu coated Si Wafer ( 10x10 mm size )
Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
Thickness of Ta diffusion barrier: 20-50 nm
0.525 mm thickness Si wafer (Prime Grade)
P type, B doped, <100> orientation, SSP
Resistivities: 1-20 ohm-cm
Surface Roughness: as grown , RA < 10 nm
Package: One 1000 class clean room with 100 class plastic bag
10 pcs per package for minimum order


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater