MTI | SKU: Fm4HSCon4HSC50d03C2deg4US

4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

Name: 4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
Brand: MTI
SKU: Fm4HSCon4HSC50d03C2deg4US
Price: 3448.85 EUR
Availability: InStock

€3.448,85

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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

MTI

Specifications

Film:

4H-SiC (0001)
Film target thickness: 11 um with (thickness acceptation range) +/- 10%
Conductive Type P type with
Carrier concentration: (0.3~ 1.9)E16 /cc
Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom

Substrate:

4H-SiC (0001) Prime grade
Off axis: miscut 4.0 +/- 0.5 degree
Prime Grade: with FWHM 20 arc second
OF orientation: parallel {10-10} +/- 5 degree
OF length: 15.9 +/- 1.7 mm
IF orientation: 90 degree cw. from OF +/- 5 degree
IF length: 8.0 +/- 1.7 mm
Diameter: 50.8 +/- 0.38 mm
Thickness: 330 +/- 25 um
Resistivity: N/A
Edge exclusion: 1mm
Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS


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