2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2&qu...
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
MTI
2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition
Substrate:
- InP Orientation: (100)
- Doped with Fe, Semi-Insulating
- Wafer size: 2" diameter x 0.35 mm
- Resistivity:>1x10^7 ohm.cm
- Both sides polished
EPI Film :
- N-type InGaAs(Si-doped), (100)
- Nc>2x10^18 /cc
- Film Thickness :0.5 um (+/- 20%)
- Roughness of epi-layer is close to 1 mono-layer (ML)
- One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.
EPI ready surface and packing
Typical Properties
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
Undoped |
N |
7.5-9.5 x1015 |
4300-4400 |
1.6E-1-4.5E-1 |
<5000 |
Sn |
N |
0.5 ~1.0 x1018 0.5 ~1.0 x1018 |
200 ~ 2400 1500 ~ 2000 |
0.001 ~ 0.002 0.0025~0.007 |
3~5 x104 |
Zn |
P |
0.8 ~ 2.0 x1018 2.5 ~ 4.0 x1018 |
2500 ~ 3500 1300 ~ 1600 |
0.0025 ~ 0.006 |
1~ 3 x104 |
Fe |
Semi-Insulating |
N/A |
1550-1640 |
(2.1-2.7) x107 | <5000 |
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