Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm

Ge Wafer Specification

• Growing Method:            CZ
• Wafer Size:                    10 x 10 x0.45 mm
• Surface Polishing:          one side epi polished
• Orientation:                    (100) 
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                          Sb doped
• Conductor type:             N-type
• Resistivity:                     <0.009 Ohm.cm  (If you would like to measure the resistivity accurately,
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)                    
• Package:                       under 1000 class clean room  in wafer container     
  
  
  

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