Swingable Dual Heating-zone High Pressure Furnace -10 MPa @ 1200°C for GaN Crystal Growth - CM-HIP-2-II
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Swingable Dual Heating-zone High Pressure Furnace -10 MPa @ 1200°C for GaN Crystal Growth - CM-HIP-2-II
MTI
CM-HIP-2-II is a swingable dual heating-zone, high-pressure furnace up to 10 MPa @ 1200°C. It is designed especially for crystal growth, such as flux method, ammonia-thermal method, or LPE for GaN or YIG. It can also be used as a conventional Hot Isostatic Pressing (HIP) furnace.
Specifications