Crystal Substrate A-Z

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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick

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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

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SiC Heating Element for KSL-1400A4 muffle Furnace - KSL-1400A4-HEL

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SiC - 6H (0001), 5x5x0.33 mm, 2 SP

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SiC - 6H (0001), 10x10x0.26 mm , two sides polished

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SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished

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SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished

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SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1

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SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4

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SiC - 4H (0001), 5x5x0.33 mm , two sides polished

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SiC - 4H (0001), 5x5x0.3 mm , one side polished