VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

InP single crystal wafer

Orientation:                  (100)
Size:                            10x10 x 0.35 mm
Doping:                        Un- doped
Conducting type:           N
Polish:                          One side  polished
Mobility:                       3500-4500cm^2/V.S
EPD:                            <6000 /cm^2
Carrier Concerntration:  3x10 ^16 /cmE-3

Typical Properties

Dopant	Type	Carrier Concentration ( cm-3)	Mobility ( cm2/V.Sec)	Resistivity ( ohm-cm )	EPD (cm-2)
Undoped	N	7.5-9.5  x1015	4300-4400	1.6E-1-4.5E-1	<5000
Sn	N	0.5 ~1.0 x1018 0.5 ~1.0 x1018	200 ~ 2400 1500 ~ 2000	0.001 ~ 0.002 0.0025~0.007	3~5 x104
Zn	P	0.8 ~ 2.0  x1018 2.5 ~ 4.0 x1018	2500 ~ 3500 1300 ~ 1600	0.0025 ~ 0.006	1~ 3 x104
Fe	Semi-Insulating	N/A	1550-1640	(2.1-2.7) x107	<5000

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