SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished

Specifications of Substrate

• Orientation:  <0001> ^±30?
• Edge Orientation : <11-20>^±1°<10-10>^±1°
• Dimension:   2"+/-0.15mm x 0.3 +/-0.05mm
• Polished:  one side polished
• Surface Roughness:  < 5 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight: 40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.07 A       c = 10.53 A
• Stacking sequence: ABCB  (4H)
• Growth Technique:  MOCVD         
• Polishing: Silicon face EPI- polished
•  Band Gap:  3.26eV ( Indirect)
• Conductivity type: N
• TTV/Bow/Warp: <=35 um
• Micropipe Density:  <=30 cm^-2
• Resistivity: 0.015~0.5 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity @ 300K: 4W / cm . K
• Hardness: 9 Mohs
• Doping level of nitrogen atoms : 10^18-19 cm^-3

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