MTI  |  SKU: SiBc101D05C1deg4R0004

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

€67,58


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Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

MTI

  • Single crystal               Si,    (CZ)   
  • Conductivity:               P type ( B - doped)
  • Resistivity:                  0.004-0.006 ohm-cm   (If you would like to measure the resistivity accurately, 
                                        please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                            4" in diameter x 0.5mm
  • Orientation:                 (111)  4 +/- 0.5 degree off
  • Polish:                         One side polished
  • Surface roughness:       < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater