MTI  |  SKU: SIPa76D05C1deg4R10

Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

€67,58

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Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

MTI

  • Single crystal                 Si   
  • Conductivity:                N type  ( P doped)
  • Resistivity:                   10-30ohm-CM
  • Size:                                3" diameter x  0.5  mm
  • Orientation:                  (100)  4 Deg. Off Toward  (110)
  • Polish:                           One side polished
  • Surface roughness:      < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
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