SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

Specifications of Substrate

• Orientation:  <0001> +/-0.5
• Dimension: 1" x 0.26  +/-0.03 mm
• Polished:  One side  epi polished
• Surface Roughness: < 5 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight: 40.10
• Unit Cell:  Hexagonal
• Lattice constant:  a =3.07 A       c = 10.53 A
• Stacking sequence:  ABCB  (4H)
• Growth Technique:  MOCVD         
• Polishing : Silicon face polished
•  Band Gap:  3.26eV ( Indirect)
• Conductivity type: N
• TTV/Bow/Warp: <=35 um 
• Micropipe Density:  <=30 cm^-2
• Resistivity: 0.015~0.5 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity @ 300K:  4W / cm . K
• Hardness:  9 Mohs

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