MTI  |  SKU: LAOa202005S1US

LaAlO3, (100) orn. 20x20 x 0.5mm substrate , one side polished

€201,25

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LaAlO3, (100) orn. 20x20 x 0.5mm substrate , one side polished

MTI

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3  crystal are well-suitable for low-loss microwave and dielectric resonance applications.

 

Specifications

Wafer Size:                    20x20 x  0.5 mm thickness +/-0.05 mm,

Wafer Orientation:         (100) +/-0.5 Deg 

Polishing:                       One side CMP polished with free sub-surface damage.  

Surface finish (RMS or Ra) :     < 10A

Packed                          Under 1000 class clean room. (EPI ready) and in a 100-grade plastic bag in a wafer container.

Lattice Constant   a=3.792Å Pseudocubic

  • Warning:     LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below
  •        

 
Typical Physical Properties

Crystal Structure

Pseudo cubic    a=3.792Å 

Growth Method

Czochralski

Density

6.52   g/cm3

Melt Point

2080 oC        

Thermal expansion

 10 (x10-6/ oC)

Dielectric Constant

~ 25 

Loss Tangent at 10 GHz

~3x10-4 @ 300K ,       ~0.6 x10-4 @77K

Color and Appearance

Tan to Brown based on annealing condition

Visible twins on the polished substrate.

Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC

 

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