LaAlO3, (100) orn. 20x20 x 0.5mm substrate , 2 side epi polished
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LaAlO3, (100) orn. 20x20 x 0.5mm substrate , 2 side epi polished
LaAlO3, (100) orn. 20x20 x 0.5mm substrate , 2 side epi polished
MTI
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well-suitable for low-loss microwave and dielectric resonance applications.
Specifications
Wafer Size: 20x20 x 0.5 mm thickness +/-0.05 mm,
Wafer Orientation: (100) +/-0.5 Deg
Polishing: Two sides CMP polished with free sub-surface damage. Please choose one side or two sides polished from " option "
Surface finish (RMS or Ra) : < 10A
Packed Under 1000 class clean room. (EPI ready) and in a 100-grade plastic bag in a wafer container.
Lattice Constant a=3.792Å Pseudocubic
Warning: LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below
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Typical Physical Properties |
Crystal Structure |
Pseudo cubic a=3.792Š |
Growth Method |
Czochralski |
Density |
6.52 g/cm3 |
Melt Point |
2080 oC |
Thermal expansion |
10 (x10-6/ oC) |
Dielectric Constant |
~ 25 |
Loss Tangent at 10 GHz |
~3x10-4 @ 300K , ~0.6 x10-4 @77K |
Color and Appearance |
Tan to Brown based on annealing condition Visible twins on polished substrate. |
Chemical Stability |
Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC |
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