MTI | SKU:
GEsba50D045C2R0001US
Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm
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Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm
MTI
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (100) +/_0.5 Deg.
- Wafer Size: 2" dia x 450 microns
- Surface Polishing: Two sides epi polished
- Surface roughness: RMS or Ra:~ 10 A ( by AFM)
- Doping: Sb Doped
- Conductor type: N-type
- Resistivity: 0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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