MTI  |  SKU: GEsba50D045C2R0001US

Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

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Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

MTI

Ge Wafer Specification

  • Growing Method:              CZ
  • Orientation:                      (100) +/_0.5 Deg.
  • Wafer Size:                      2" dia x  450 microns  
  • Surface Polishing:            Two sides epi polished
  • Surface roughness:           RMS or Ra:~ 10 A ( by AFM)
  • Doping:                            Sb Doped
  • Conductor type:                N-type
  • Resistivity:                       0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately, 
                                          please order our
     Portable 4 Probe Resistivity Testing Instrument.)               
  • Package:                         under 1000 class clean room      

Typical Properties:

  • Structure:                        Cubic, a = 5.6754 A
  • Density:                           5.323 g/cm3 at room temperature
  • Melting Point:                   937.4 oC
  • Thermal Conductivity:        640