MTI  |  SKU: GEGac050505S1R0005

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

€28,75

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm

MTI

Specifications

  • Growing Method:             CZ
  • Wafer Size:                  5x5x0.5 mm
  • Surface Polishing:          one side epi polished
  • Orientation:                   (111)
  • Surface roughness:        < 8 A ( by AFM)
  • Doping:                         Ga-doped
  • Conductor type:             P-type
  • Resistivity:                    0.005-0.01 Ohms/cm
  • EPD:                             N/A
  • Package:                       under 1000 class clean room  in wafer container     
Back to top